PART |
Description |
Maker |
AS7C33256FT32_36A AS7C33256FT32_36A.V1.1 AS7C33256 |
3.3V 256K x 32/36 Flow-through synchronous SRAM 256K X 32 STANDARD SRAM, 8.5 ns, PQFP100 3.3V 256K x 32/36 Flow-through synchronous SRAM 256K X 36 STANDARD SRAM, 7.5 ns, PQFP100 3.3V 256K x 32/36 Flow-through synchronous SRAM 256K X 32 STANDARD SRAM, 7.5 ns, PQFP100 3.3V 256K x 32/36 Flow-through synchronous SRAM 256K X 32 STANDARD SRAM, 10 ns, PQFP100 DIODE ZENER SINGLE 1000mW 24Vz 10.5mA-Izt 0.05 5uA-Ir 18.2Vr DO41-GLASS 5K/AMMO From old datasheet system Sync SRAM - 3.3V
|
Alliance Semiconductor, Corp. Alliance Semiconductor Corporation ALSC
|
DS1230WP-100 |
3.3V 256k Nonvolatile SRAM
|
MAXIM - Dallas Semiconductor
|
DS1330W DS1330WP-150-IND 1330W DS1330WP-100 DS1330 |
3.3V 256K Nonovolatile SRAM with Battery Monitor 3.3V 256K Nonvolatile SRAM with Battery Monitor From old datasheet system
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MAXIM - Dallas Semiconductor DALLAS[Dallas Semiconducotr]
|
DS1330YL-70 |
256k Nonvolatile SRAM with Battery Monitor
|
MAXIM - Dallas Semiconductor
|
DS2030Y DS2030AB |
Single-Piece 256k Nonvolatile SRAM
|
Maxim
|
DS1220 DS1220AB DS1220AB-100-IND DS1220AB-120-IND |
16k Nonvolatile SRAM 2K X 8 NON-VOLATILE SRAM MODULE, 150 ns, PDIP24 16k Nonvolatile SRAM 2K X 8 NON-VOLATILE SRAM MODULE, 120 ns, PDIP24 16k Nonvolatile SRAM 16K的非易失SRAM M39012 MIL RF CONNECTOR 16K的非易失SRAM
|
Maxim Integrated Products, Inc. HIROSE ELECTRIC Co., Ltd. DALLAS[Dallas Semiconductor] Dallas Semiconducotr MAXIM - Dallas Semiconductor
|
AS7C33256PFS18A-166TQI AS7C33256PFS16A AS7C33256PF |
3.3V 256K x 16/18 pipeline burst synchronous SRAM 3.3V 256K×18 Ppipeline Burst Synchronous SRAM(3.3V 256K×18流水线脉冲同步静态RAM) 3.3 256K × 18 Ppipeline突发同步SRAM的电压(3.3V 256K × 18流水线脉冲同步静态内存) 3.3V 256K 】 16/18 pipeline burst synchronous SRAM 3.3V 256K x 16 pipeline burst synchronous SRAM, clock speed - 133MHz 3.3V 256K × 16/18 pipeline burst synchronous SRAM
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Alliance Semiconductor, Corp. ALSC[Alliance Semiconductor Corporation] Alliance Semiconductor ...
|
DS1350AB DS1350AB-100 DS1350AB-70 DS1350ABP-100-IN |
512K X 8 NON-VOLATILE SRAM MODULE, 70 ns, DMA34 POWERCAP MODULE-34 4096k Nonvolatile SRAM with Battery Monitor 1024k Nonvolatile SRAM with Battery Monitor
|
Maxim Integrated Products, Inc. DALLAS[Dallas Semiconductor] DALLAS[Dallas Semiconducotr] MAXIM - Dallas Semiconductor
|
CY7C1355B-117BGI CY7C1355B-117BZC CY7C1355B-117BGC |
9-Mb (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture 9 - MB的(256 × 36/512K × 18)流体系结构,通过与总线延迟静态存储器 9-Mb (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture 256K X 36 ZBT SRAM, 7.5 ns, PBGA165 9-Mb (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture 256K X 36 ZBT SRAM, 6.5 ns, PBGA165 9-Mb (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture 256K X 36 ZBT SRAM, 7 ns, PQFP100
|
Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
|
GS880E18 GS880E36T-11 GS880E18T-11 GS880E32T-11.5I |
512K X 18 CACHE SRAM, 11.5 ns, PQFP100 512K x 18, 256K x 32, 256K x 36 8Mb Sync Burst SRAMs 256K X 32 CACHE SRAM, 11.5 ns, PQFP100 512K x 18, 256K x 32, 256K x 36 8Mb Sync Burst SRAMs 512K X 18 CACHE SRAM, 11 ns, PQFP100 512K x 18, 256K x 32, 256K x 36 8Mb Sync Burst SRAMs 256K X 36 CACHE SRAM, 11 ns, PQFP100 8Mb12K x 18Bit) Synchronous Burst SRAM(8M位(512K x 18位)同步静态RAM(带2位脉冲地址计数器))
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http:// GSI Technology, Inc.
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